uPA1912

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1912
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PACKAGE DRAWING (Unit : mm)
DESCRIPTION
0.65–0.15
0.32 +0.1
–0.05
+0.1
The µPA1912 features a low on-state resistance and excellent
2.8 ±0.2
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
0.16+0.1
–0.06
FEATURES
6
5
4
1
2
3
1.5
The µPA1912 is a switching device which can be driven
directly by a 2.5-V power source.
0 to 0.1
• Can be driven by a 2.5-V power source
• Low on-state resistance
0.95
RDS(on)1 = 50 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)
1.9
RDS(on)2 = 52 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A)
2.9 ±0.2
RDS(on)3 = 70 mΩ MAX. (VGS = –2.5 V, ID = –2.5 A)
0.65
0.95
0.9 to 1.1
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1912TE
6-pin Mini Mold (Thin Type)
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–12
V
Gate to Source Voltage
VGSS
±10
V
Drain Current (DC)
ID(DC)
±4.5
A
ID(pulse)
±18
A
Gate
Protection
Diode
PT1
0.2
W
Marking: TD
PT2
2
W
Drain Current (pulse)
Note1
Total Power Dissipation
Total Power Dissipation
Note2
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Body
Diode
Gate
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on FR-4 board, t ≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13806EJ2V0DS00 (2nd edition)
Date Published July 1999 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
©
1998, 1999
µ PA1912
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = –12 V, VGS = 0 V
–10
µA
Gate Leakage Current
IGSS
VGS = ±10 V, VDS = 0 V
±10
µA
VGS(off)
VDS = –10 V, ID = –1 mA
–0.5
–0.90
–1.5
V
| yfs |
VDS = –10 V, ID = –2.5 A
3
9.3
RDS(on)1
VGS = –4.5 V, ID = –2.5 A
39
50
mΩ
RDS(on)2
VGS = –4.0 V, ID = –2.5 A
40
52
mΩ
RDS(on)3
VGS = –2.5 V, ID = –2.5 A
53
70
mΩ
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
S
Input Capacitance
Ciss
VDS = –10 V
810
pF
Output Capacitance
Coss
VGS = 0 V
241
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
122
pF
Turn-on Delay Time
td(on)
VDD = –6 V
304
ns
tr
ID = –2.5 A
532
ns
VGS(on) = –4.0 V
406
ns
RG = 10 Ω
796
ns
Rise Time
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
VDD = –10 V
5.6
nC
Gate to Source Charge
QGS
ID = –4.5 A
2.2
nC
Gate to Drain Charge
QGD
VGS = –4.0 V
2.6
nC
Diode Forward Voltage
VF(S-D)
IF = 4.5 A, VGS = 0 V
0.86
V
Reverse Recovery Time
trr
IF = 4.5 A, VGS = 0 V
1.1
µs
Reverse Recovery Charge
Qrr
di/dt = 10 A / µs
4.3
µC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
RL
RG
RG = 10 Ω
PG.
VGS
VGS
Wave Form
0
PG.
90 %
90 %
ID
VGS
0
ID
Wave Form
τ
τ = 1µ s
Duty Cycle ≤ 1 %
10 %
0 10 %
tr
td(on)
ton
IG = 2 mA
RL
50 Ω
VDD
90 %
VDD
ID
2
VGS(on)
10 %
td(off)
tf
toff
Data Sheet D13806EJ2V0DS00
µ PA1912
TYPICAL CHARCTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
−100
80
ID - Drain Current - A
dT - Derating Factor - %
100
60
40
d
ite
im V)
) L .5
4
on
S( = −
RD GS
−10
(V
−1
30
60
90
120
−0.1
150
−1
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
−100
FORWARD TRANSFER CHARACTERISTICS
−20
−100
VGS = −4.5 V
VDS = −10 V
−10
VGS = −4.0 V
−12
VGS = −2.5 V
−8
−4
ID - Drain Current - A
−16
−10
VDS - Drain to Source Voltage - V
TA - Ambient Temperature - ˚C
TA = 125˚C
75˚C
−1
−0.1
TA = 25˚C
−25˚C
−0.01
−0.001
−0.0001
−0.2
0
−0.4
−0.6
−0.8
−1.0
−0.00001
−1.0
0
−2.0
−3.0
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
−1.5
VDS = −10 V
ID = −1 mA
−1.0
−0.5
−50
0
50
100
150
| yfs | - Forward Transfer Admittance - S
ID - Drain Current - A
ID(DC)
20
0
VGS(off) - Gate to Source Cut-off Voltage - V
Single Pulse
Mounted on 250mm2 x 35µm copper
pad connected to drain electrode in
50mm x 50mm x 1.6mm FR-4 board.
ID(pulse)
PW
=1
m
s
PW
=1
0
PW
m
s
=1
00
PW
m
=5
s
s
100
10
VDS = −10 V
TA = −25˚C
25˚C
75˚C
125˚C
1
0.1
0.01
−0.01
−0.1
−1
−10
−100
ID - Drain Current - A
Tch - Channel Temperature - ˚C
Data Sheet D13806EJ2V0DS00
3
120
VGS = −2.5 V
100
80
TA =125 °C
TA = 75 °C
60
TA = 25 °C
TA =−25°C
40
−0.01
60
−0.1
−1
−10
−100
TA =125 °C
TA = 25 °C
−0.1
−1
−10
−100
TA = 75 °C
40
TA = 25 °C
TA =−25°C
30
−0.01
−0.1
−1
−10
100
80
60
40
20
−2
−4
−6
−8
−10
VGS =−2.5 V
60
VGS =−4.0 V
50
VGS =−4.5 V
40
30
−50
0
50
100
150
Tch - Channel Temperature - °C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
ID = −2.5 A
10000
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
4
TA =125 °C
50
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
70
ID = −2.5 A
ID - Drain Current - A
0
VGS = −4.0 V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
TA =−25°C
30
−0.01
60
ID - Drain Current - A
TA = 75 °C
40
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
VGS = −4.5 V
50
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
µ PA1912
f = 1 MHz
VGS = 0 V
1000
Ciss
Coss
Crss
100
10
−0.1
VGS - Gate to Source Voltage - V
−1.0
−10
VDS - Drain to Source Voltage - V
Data Sheet D13806EJ2V0DS00
−100
µ PA1912
★
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
SWITCHING CHARACTERISTICS
IF(S-D) - Diode Forward Current - A
100
1000
tf
tr
td(off)
td(on)
100
10
−0.1
VDD = −6 V
VGS(on) = −4.0 V
RG = 10 Ω
−1
10
1
0.1
0.01
0.4
−10
0.6
0.8
1.0
1.2
VF(S-D) - Source to Drain Voltage - V
ID - Drain Current - A
DYNAMIC INPUT CHARACTERISTICS
−8
ID = −4.5 A
−6
VDD = −10 V
−6 V
−4
−2
0
2
4
6
8
10
QG - Total Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - °C/W
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
10000
Single Pulse
Without Board
100
Mounted on 250mm2×35µm copper pad
connected to drain electrode in
50mm×50mm×1.6mm FR-4 board
10
1
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Data Sheet D13806EJ2V0DS00
5
µ PA1912
[MEMO]
6
Data Sheet D13806EJ2V0DS00
µ PA1912
[MEMO]
Data Sheet D13806EJ2V0DS00
7
µ PA1912
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8